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Yan (Anna) Zhuang, Ph.D. – Instrument Development
Yan

Email: anna.zhuang@peeri.org

Education:

-Ph.D. Electrical Engineering, University of Massachusetts Amherst

-M.S. Semiconductor device and physics, Institute of Semiconductors, Chinese Academy of Sciences

-B.S. Information and Electronics Engineering, Zhejiang University

Research Interests:

Instrument prototype development, Circuit design and simulation, High frequency receiver system, Microwave processing

Publications and Patents:

Y. Zhuang, Dazhen Gu and S. Yngvesson, “Bistability in NbN HEB Mixer Devices”, 14th Intern. Symp. Space THz. Tech. Tucson, AZ, 2003

Y. Zhuang and S. Yngvesson, “Detection and Interpretation of Bistability Effects in NbN HEB Devices”, 13th Intern. Symp. Space THz. Tech., Cambridge, MA, 2002

Y. Zhuang and S. Yngvesson, “Negative Resistance Effects in NbN HEB Devices”, 12th Intern. Symp. Space THz. Tech.,San Diego, CA, 2001

E. Gerecht, C. Musante, Y. Zhuang, M. Ji, K.S. Yngvesson et al, “ New Results on THZ HEB Low-Noise Receiver and Focal Plane Array”, Proc. SPIE, vol. 4111 (Terahertz and Gigahertz Photonics), 2000

E. Gerecht, C. Musante, Y. Zhuang, M. Ji, K.S. Yngvesson et al, “ NbN Hot Electron Bolometric Mixer with instrinsic Receiver Noise Temperature of Less than Five Times the Quantum Noise Limit”, IEEE Intern. Microwave Symp., Boston MA 2000

E. Gerecht, D. Musante, Y. Zhuang, M. Ji, S. Yngvesson et al, “Development of Focal Plane Arrays Utilizing NbN Hot Electron Bolometric Mixers for the THZ Region”, 11th Intern. Symp. Space THZ. Tech., Ann Arbor, MI, 2000

E. Gerecht, C. Musante, Y. Zhuang, S. Yngvesson etal, “NbN Hot Electron Bolometric Mixers – A New Technology for Low-Noise THz Receivers”, IEEE Transaction on Microwave Theory and Techniques, vol.47, no.12, 1999